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MITSUBISHI RF POWER MOS FET
2SK2974
DESCRIPTION
2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.
OUTLINE DRAWING
INDEX MARK (TOP)
Dimensions in mm
(BOTTOM)
FEATURES
* High power gain:Gpe8.4dB @VDD=7.2V,f=450MHz,Pin=30dBm * High efficiency:55% typ. * Source case type seramic package (connected internally to source)
3
4.9
1
2
2.0 3.50 t=1.2MAX
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets.
1 : DRAIN 2 : SOURCE 3 : GATE
MARKING
INDEX MARK TYPE No. LOT No.
ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise noted)
Symbol VDSS VGSS Pch Tj Tstg Parameter Drain to source voltage Gate to source voltage Channel dissipation Junction temperature Storage temperature Conditions Ratings 17 10 10 175 -40 to +110 Unit V V W C C
Tc=25C
(Note2)
Note1: Above parameters are guaranteed independently. 2: Solder source pad on Copper Block(14x2.8x2mm)
ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise noted)
Symbol IDSS IGSS VTH Ciss Coss Pout hD Parameter Test conditions VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=7V, IDS=1mA VGS=10V, VDS=0V,f=1MHz VDS=10V, VGS=0V,f=1MHz VDS=7.2V, Pin=1W,f=450MHz Min Limits Typ Max 10 1 1.7 Unit A A V pF pF W %
Threshold voltage
1.0 90 95 8 55
7 50
Note: Above parameters,ratings,limits and conditions are subject to change.
Nov. 97
MITSUBISHI RF POWER MOS FET
2SK2974
TYPICAL PERFORMANCE DATA
IDS VS. VDS
8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 4.5V 4.0V 3.5V 3.0V 2 2.5V VGS=2.0V 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 TC=25C 8 5.0V 7 6 5 4 3 VDS=9.6V TC=25C
IDS VS. VGS
VDS(V)
VGS(V)
PO, add VS. Pin
50 48 46 44 42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 80 70 PO add 40 30 20 10 0 5 10 15 20 25 30 35 0 40 60 50 50 48 46 44 42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0
PO, add VS. VDD
70 68 66 64 62 60 58 56 54 52 50 48 46 44 42 40 38 36 34 32 30 28 26 24 22 20 10
PO
add
2
3
4
5
6
7
8
9
INPUT POWER Pin (dBm)
DRAIN SUPPLY VOLTAGE
VDD(V)
EQUIVALENT CIRCUIT
41.5mm 3mm 6mm 2mm 5mm 5mm 47mm
R1 CR10-562 5600
C4 GR40-090 9pF
R2 CR10-510 51 C5 GR40-102 1000pF C6 GR40-050 5pF C7 GR40-270 27pF
C9 GR40-010 1pF
C1 GR40-102 1000pF
C2 GR40-10 10pF
C3 10F, 100pF,10pF in parallel
L1 4Turns AWG#26,1.1 Enameled wire(mm)
C10 GR40-102 1000pF
C11 GR40-10 10pF
C8 10F, 1000pF,10pF in parallel VDD
INPUT
VGG
OUTPUT
Note: Board material-glass epoxi substrate micri strip line width=2.8mm, r :4.8,t=1.6mm Nov. 97
MITSUBISHI RF POWER MOS FET
2SK2974
S-PARAMETER DATA(TYPICAL)
FREQ. (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 0.87151 0.87157 0.88083 0.89043 0.90037 0.90814 0.91746 0.92499 0.93036 0.93571 0.93941 0.94226 0.94534 0.94808 0.95312 0.95459 0.95601 0.95774 0.95926 0.96325 0.96168 0.96230 0.96227 0.96198 0.96267 0.96118 0.96264 0.96245 0.96221 0.96205 S11 -159.60 -168.20 -170.84 -172.00 -172.68 -173.24 -173.67 -174.06 -174.43 -174.90 -175.30 -175.57 -176.04 -176.45 -176.90 -177.37 -177.87 -178.27 -178.87 -179.62 179.78 179.39 178.73 178.34 177.78 176.97 176.19 175.54 174.94 174.16 0.02263 0.02175 0.02059 0.01885 0.01735 0.01580 0.01446 0.01346 0.01268 0.01263 0.01272 0.01343 0.01496 0.01646 0.01744 0.01996 0.02182 0.02413 0.02631 0.02817 0.03099 0.03270 0.03460 0.03660 0.03846 0.04065 0.04304 0.04525 0.04730 0.04937 S12 6.0727 0.6356 -2.3595 -2.7489 -1.3541 1.7258 7.6264 14.4503 22.2439 31.1934 40.3158 49.8125 57.6698 62.6933 67.3336 71.8032 74.1606 76.8760 76.4323 78.7422 78.8976 78.4777 79.5511 80.3997 79.7305 80.5372 80.7289 80.2058 79.8688 79.5813 8.98850 4.47355 2.87870 2.05082 1.57746 1.24044 1.01298 0.84559 0.71792 0.62459 0.54469 0.48199 0.42937 0.38937 0.35246 0.32860 0.29869 0.27468 0.25880 0.24131 0.22658 0.21380 0.20166 0.19253 0.18153 0.17023 0.16501 0.15789 0.14964 0.14381 S21 91.5160 81.1597 72.5416 67.1200 61.7324 57.2616 53.9587 50.7854 47.8135 45.8295 43.5312 41.6364 40.1854 38.6233 37.2574 36.4384 35.0739 34.1654 33.0220 32.7404 31.8962 31.1023 30.5749 30.1079 30.7341 29.4614 29.5139 29.4685 29.2546 29.6617
VDD=7.2V,ID=600mA S22 0.75544 0.77551 0.78986 0.80776 0.83272 0.83624 0.85264 0.86892 0.87130 0.88564 0.89176 0.89413 0.90472 0.90807 0.91071 0.91875 0.91928 0.91707 0.92295 0.92417 0.92742 0.93216 0.93331 0.93364 0.93557 0.93599 0.93290 0.93594 0.93314 0.93009 -169.72 -171.14 -172.22 -171.94 -171.89 -171.98 -172.07 -172.50 -172.39 -172.57 -172.90 -173.01 -173.39 -173.70 -173.95 -174.46 -174.80 -175.08 -175.88 -176.19 -176.66 -177.69 -177.94 -178.72 -179.24 -179.44 179.28 178.62 178.32 177.13
Nov. 97

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